111-V Diode Lasers for New Emission Wavelengths

III Two types of III-V diode lasers have been developed for new emission wavelengths. We have obtained emission at 0.9 to 1.06 Jim nom quantum-well lasers with a strained InGaAs active layer and AlGaAs confining layers. Organometallic vapor phase epitaxy (OMVPE) was used to grow the layers on GaAs substrates. These InGaAs/AlGaAs lasers have achieved threshold current densities as low as 65 Afcm, differential quantum efficiencies as high as 90%, and, for devices 300 Jim wide and 1000 Jim long, continuous output powers up to 3.2 Wand power efficiencies as high as 47%. We have obtained emission at 2.27 J.1ID nom lattice-matched doubleheterostructure lasers with a GaInAsSb active layer and AlGaAsSb confining layers gtown by molecular-beam epitaxy (MBE) on GaSb substrates. These GaInAsSb/AlGaAsSb lasers have exhibited threshold current densities as low as 1.5 kAlcm, differential quantum efficiencies as high as 50%, and pulsed output powers as high as 1.8 W. These efficiencies and power values are the highest ever reported for room-temperature operation ofsemiconductor lasers with emission wavelengths >2 Jim. Emission nom 1.8 to 4.4 Jim can potentially be achieved by changing the GaInAsSb composition.